30-04-2021

55n10 Mosfet



55n10 mosfet equivalent

55n10 Mosfet Datasheet



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55N10 Datasheet Preview

N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor
55N10
·Drain Current ID= 55A@ TC=25℃
: VDSS= 100V(Min)
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
PARAMETER
VDSS
VGS Gate-Source Voltage
100
55
V
ID(puls)
275 A
250 W
Tstg Storage Temperature Range
·THERMAL CHARACTERISTICS
PARAMETER
Rth j-c
Thermal Resistance, Junction to Case
0.5 ℃/W
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55n10 Mosfet Equivalent

55n10 mosfet equivalent

1pc, 2pcs, 3pcs, or 5pcs. Warranty does not cover You can choose. MOSFET 55N10 ON Semiconductor MOSFET Products (2) Datasheets (2). Rr Reverse Recovery Charge ––– 12 18 nC Thermal Resistance Parameter UnitsThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET,.

FQP55N10, QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating. 600V/4.5A POWER MOSFET (N-Channel) MSU5N60 600V/4.5A Power MOSFET (N-Channel) General Description MSU5N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in.



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55N10 Datasheet Preview

N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor
isc Product Specification
SYMBOL
V(BR)DSS Drain-Source Breakdown Voltage
VSD Diode Forward On-Voltage
IGSS Gate-Body Leakage Current
Ciss Input Capacitance
Coss Output Capacitance
VGS= 0; ID= 250µA
IF=55A ;VGS= 0
VGS= ±20V;VDS= 0
VDS=25V;
fT=1MHz
100 V
4.0 V
±100 nA
5000
2500
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